发明名称 |
Method of manufacturing a multilayer metallization structure with non-directional sputtering method |
摘要 |
In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.
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申请公布号 |
US6764945(B2) |
申请公布日期 |
2004.07.20 |
申请号 |
US20010822318 |
申请日期 |
2001.04.02 |
申请人 |
RENESAS TECH CORP;HITACHI ULSI SYS CO LTD |
发明人 |
ASHIHARA HIROSHI;SAITO TATSUYUKI;TANAKA UITSU;SUZUKI HIDENORI;TSUGANE HIDEAKI;YOSHIDA YASUKO;OKUTANI KEN |
分类号 |
H01L21/285;H01L21/28;H01L21/3205;H01L21/44;H01L21/4763;H01L21/768;H01L23/52;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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