发明名称 Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
摘要 At least, an antiferromagnetic layer 4, a magnetization fixing layer 12, a non-magnetic layer 9, and a free layer 10 are successively formed. The magnetization fixing layer 12 or the free layer 10 is provided with a layered ferrimagnetic structure which comprises a pair of magnetic layers 5 and 8 through the intermediary of a non-magnetic intermediate layer 6. In the layered ferrimagnetic structure, a surface oxidation layer 7 is formed on the surface of the non-magnetic intermediate layer 6 to the side of the non-magnetic layer 9.
申请公布号 US6765769(B2) 申请公布日期 2004.07.20
申请号 US20010784747 申请日期 2001.02.15
申请人 SONY CORPORATION 发明人 MIZUGUCHI TETSUYA
分类号 G11B5/39;H01F10/16;H01F10/32;H01L43/08;(IPC1-7):G11B5/127 主分类号 G11B5/39
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