发明名称 |
Manufacturing method of semiconductor device |
摘要 |
Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided. |
申请公布号 |
US6764886(B2) |
申请公布日期 |
2004.07.20 |
申请号 |
US20020315204 |
申请日期 |
2002.12.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SHIMOMURA AKIHISA;OHTANI HISASHI;HIROKI MASAAKI;TANAKA KOICHIRO;SHIGA AIKO;AKIBA MAI;KASAHARA KENJI |
分类号 |
G02F1/13;H01L21/20;H01L23/544;(IPC1-7):H01L21/84 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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