发明名称 Manufacturing method of semiconductor device
摘要 Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensable portion. Since the time required for laser crystallization can be reduced, it is possible to increase the substrate processing speed. By applying the above-described constitution to a conventional SLS method, a means for solving such problem in the conventional SLS method that the substrate processing efficiency is insufficient, is provided.
申请公布号 US6764886(B2) 申请公布日期 2004.07.20
申请号 US20020315204 申请日期 2002.12.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;SHIMOMURA AKIHISA;OHTANI HISASHI;HIROKI MASAAKI;TANAKA KOICHIRO;SHIGA AIKO;AKIBA MAI;KASAHARA KENJI
分类号 G02F1/13;H01L21/20;H01L23/544;(IPC1-7):H01L21/84 主分类号 G02F1/13
代理机构 代理人
主权项
地址