发明名称 |
FinFET-based SRAM cell |
摘要 |
A SRAM cell includes a single FinFET and two resonant tunnel diodes. The FinFet has multiple channel regions formed from separate fins. The resonant tunnel diodes may be formed from FinFET type fins. In particular, the resonant diodes may includes a thin, undoped silicon region surrounded by a dielectric. The SRAM cell is small and provides fast read/write access times.
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申请公布号 |
US6765303(B1) |
申请公布日期 |
2004.07.20 |
申请号 |
US20030429697 |
申请日期 |
2003.05.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIVOKAPIC ZORAN;AN JUDY XILIN;BUYNOSKI MATTHEW S. |
分类号 |
G11C11/412;H01L21/8244;H01L27/11;(IPC1-7):H01L27/11 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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