发明名称 |
Method for forming nitride capped Cu lines with reduced hillock formation |
摘要 |
The electromigration resistance of nitride capped Cu lines is significantly improved by treating the exposed planarized surface of inlaid Cu with a plasma containing NH3, depositing a silicon nitride capping layer at reduced temperatures, and then laser thermal annealing in N2 to densify the silicon nitride capping layer. The resulting silicon nitride capping layer also exhibits improved barrier resistance to Cu migration and improved etch stop properties. Embodiments include Cu dual damascene structures formed in dielectric material dielectric constant (k) less than about 3.9.
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申请公布号 |
US6764951(B1) |
申请公布日期 |
2004.07.20 |
申请号 |
US20020084321 |
申请日期 |
2002.02.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
VAN NGO MINH |
分类号 |
H01L21/02;H01L21/306;H01L21/318;H01L21/321;H01L21/3213;H01L21/44;H01L21/768;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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