| 摘要 |
In a semiconductor device of the present invention, a first semiconductor region is formed so that a peripheral edge thereof is located between a first field plate ring that corresponds to one of field plate rings located at the innermost side thereof and a second field plate ring that corresponds to one of the field plate rings adjacent the first plate ring. Accordingly, when a surge voltage is applied to the semiconductor device of the present invention, an electric field concentration at a part of the isolation film located under the first one of the field plate rings is relaxed and an electric field intensity decreases. Therefore, the reliability of the isolation film for withstanding the surge voltage increases.
|
