发明名称 |
Passivation of nitride spacer |
摘要 |
The formation of metal silicides in silicon nitride spacers on a gate electrode causes bridging between a gate electrode and the source and drain regions of a semiconductor device. The bridging is prevented by forming a thin layer of silicon oxide on the silicon nitride spacers prior to forming the metal silicide layers on the device.
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申请公布号 |
US6764912(B1) |
申请公布日期 |
2004.07.20 |
申请号 |
US20010919943 |
申请日期 |
2001.08.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
FOSTER JOHN CLAYTON;PATON ERIC N.;BUYNOSKI MATTHEW S.;XIANG QI;BESSER PAUL R.;KING PAUL L. |
分类号 |
H01L21/28;H01L21/336;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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