发明名称 Multiple etch method for fabricating spacer layers
摘要 Within a method for forming a spacer layer from a second layer formed of a second material laminated upon a first layer formed of a first material, in turn formed over a topographic feature, there is employed a three step etch method. The three step etch method employs: (1) a first etch method having a first enhanced etch selectivity for the second material with respect to the first material; (2) a second etch method having a second substantially neutral etch selectivity for the second material with respect to the first material; and (3) a third etch method having a third enhanced etch selectivity for the first material with respect to the second material. In accord with the three step etch method, the spacer layer is fabricated with enhanced dimensional control.
申请公布号 US6764911(B2) 申请公布日期 2004.07.20
申请号 US20020143227 申请日期 2002.05.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 HSU JW-WANG;TSAI MING-HUAN;KUO MEI-RU;PENG BAW-CHING;TAO HUN-JAN
分类号 H01L21/336;H01L29/78;(IPC1-7):H01L21/336 主分类号 H01L21/336
代理机构 代理人
主权项
地址