| 摘要 |
A semiconductor memory device includes a plurality of memory blocks, a plurality of data buses provided for the respective memory blocks, a plurality of buffer circuits which are provided for the respective memory blocks, and relay data of the data buses to connect the data buses in series, a block activation circuit which generates block selection signals corresponding to the respective memory blocks, and asserts one of the block selection signals to selectively activate one of the memory blocks, and a plurality of buffer control circuits which are provided for the respective memory blocks, one of the buffer control circuits activating a corresponding one of the buffer circuits in response to assertion of a corresponding one of the block selection signals or in response to activation of one of the buffer circuits at an adjacent one of the memory blocks that is located upstream along the data buses.
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