| 摘要 |
FIELD: semiconductor devices designed for light emission such as light-emitting diodes used as basic light sources. ^ SUBSTANCE: proposed p-n light-emitting diode has semiconductor electroluminescent crystal built around indium-gallium nitride heterostructure and organic photo-luminescent region. Semiconductor crystal ensures high-output light emission in blue-violet spectrum. Organic photo-luminescent region is made in the form of solid solution of one or more organic luminescent materials in translucent polymeric matrix and affords effective conversion of crystal emission into higher-wavelength light. Light source manufacturing process includes dissolution of organic luminescent material in liquid compound and production of photo-luminescent region from this solution around semiconductor crystal followed by solidification of solution under effect of physical factors such as temperature or ultraviolet radiation. ^ EFFECT: enhanced output of light of all colors, including white light, using unified manufacturing technique. ^ 27 cl, 11 dwg, 1 tbl, 12 ex |
