NON-VOLATILE MEMORY DEVICE WITH CHARGE STORAGE INSULATION LAYER AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A non-volatile memory device with a charge storage insulation layer is provided to prevent damage to a semiconductor substrate while a contact hole or a groove is formed by making the uppermost layer of the charge storage insulation layer formed of a metal oxide layer and by patterning an interlayer dielectric while using the metal oxide layer as an etch stop layer. CONSTITUTION: A cell region is defined in a semiconductor substrate. A plurality of parallel trench isolation layers(STI) are formed in the cell region, defining active regions. A charge storage insulation layer(74c) is conformally formed on the active regions and the isolation layers. A plurality of parallel wordlines(w1-wn) cross the upper part of the active regions, formed on the charge storage insulation layer. Conductive patterns penetrate the charge storage insulation layer to be electrically connected to the active region, disposed between the wordlines.