| 摘要 |
PURPOSE: Provided is a cleaning solution excellent in removability of particulate foreign substances and ionic foreign substances present on a semiconductor substrate after subjected to CMP process (chemical and mechanical polishing process). CONSTITUTION: The cleaning solution for semiconductor substrates contains a nonionic surface active agent represented by the following formula (1), a chelating agent and a chelating accelerator, CH3-(CH2)l-O-(CmH2mO)n-X, where l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group, wherein the cleaning solution for semiconductor substrates further comprises a nonionic surface active agent represented by the following formula (2), CH3-(CH2)a-O-(CbH2bO)d-(CxH2xO)y-X, where a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group. The cleaning solution for semiconductor substrates contains a nonionic surface active agent represented by the formula (2), a chelating agent and a chelating accelerator. The method for making a semiconductor device comprises the step of cleaning an insulating film of low dielectric constant exposed on the surface of a semiconductor substrate using the cleaning solution.
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