| 摘要 |
PROBLEM TO BE SOLVED: To provide a control method for a SCR type switch. SOLUTION: The method is composed of applying several periods of a high-frequency voltage not rectified to a switching gate where the power of one HF half-wave is not sufficient to start the SCR type switch. As a substitute for a conventional gate contact, a HF signal goes to the sensitive area of a semiconductor component capacitively coupled via an insulating film, and then operates as a sensitive thyristor. This insulating film may be one of silicon oxide film layers used for a silicon semiconductor component. COPYRIGHT: (C)2004,JPO&NCIPI
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