发明名称 SPUTTERING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a sputtering system capable of depositing a thin film of high quality on a substrate by eliminating contaminated sources in the sputtering. SOLUTION: The sputtering system 1 comprises the substrate 2, and a target 3 disposed facing the substrate, and includes an evacuatable film deposition chamber 5. The film deposition chamber is constituted so that the film deposition is performed by depositing particles produced by sputtering the target on a film deposition surface of the substrate. Components other than the substrate on which the particles in the film deposition chamber are deposited are roughened, and an oxidation film of at least one kind of metal oxide selected from a group consisting of Al, Ti, Mo, Cr, Fe, Ni and Cu, or an alloy containing at least one kind of the metal is deposited on the surface thereof. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004197139(A) 申请公布日期 2004.07.15
申请号 JP20020365064 申请日期 2002.12.17
申请人 ASAHI GLASS CO LTD 发明人 MORIMOTO TAMOTSU;FUSE MASAYUKI;YANAGISAWA SUSUMU;MORIWAKI TAKESHI;OYAMA TAKUJI
分类号 C23C14/00;(IPC1-7):C23C14/00 主分类号 C23C14/00
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