| 发明名称 |
Low-GIDL MOSFET structure and method for fabrication |
| 摘要 |
A low-GIDL current MOSFET device structure and a method of fabrication thereof which provides a low-GIDL current. The MOSFET device structure contains a central gate conductor whose edges may slightly overlap the source/drain diffusions, and left and right side wing gate conductors which are separated from the central gate conductor by a thin insulating and diffusion barrier layer.
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| 申请公布号 |
US2004137689(A1) |
申请公布日期 |
2004.07.15 |
| 申请号 |
US20030345472 |
申请日期 |
2003.01.15 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DOKUMACI OMER H.;DORIS BRUCE B.;GLUSCHENKOV OLEG;MANDELMAN JACK A.;RADENS CARL J. |
| 分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
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