发明名称 |
Semiconductor devices and methods of forming a trench in a semiconductor device |
摘要 |
Semiconductor devices and methods to form a trench in a semiconductor device are disclosed. A disclosed process comprises: forming a hollow by etching a portion of a semiconductor substrate; forming a side wall layer in an inner side wall of the hollow; forming a trench by further etching the semiconductor substrate exposed through the bottom of the hollow; and filling the trench by forming an insulation film on the side wall layer and the trench.
|
申请公布号 |
US2004135199(A1) |
申请公布日期 |
2004.07.15 |
申请号 |
US20030745028 |
申请日期 |
2003.12.23 |
申请人 |
SEO YOUNG-HUN |
发明人 |
SEO YOUNG-HUN |
分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|