发明名称 |
Vorrichtung zur Züchtung von Siliziumkristallen |
摘要 |
A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050 DEG to 850 DEG C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050 DEG to 850 DEG C., is not longer than 140 min. |
申请公布号 |
DE3905626(B4) |
申请公布日期 |
2004.07.15 |
申请号 |
DE19893905626 |
申请日期 |
1989.02.23 |
申请人 |
MITSUBISHI MATERIALS CORP., TOKIO/TOKYO;MITSUBISHI MATERIALS SILICON CORP., TOKIO/TOKYO |
发明人 |
YAMASHITA, ICHIRO;SHIMIZU, KOUTARO;BANBA, YOSHIAKI;SHIMANUKI, YASUSHI;HIGUCHI, AKIRA;FURUYA, HISASHI |
分类号 |
C30B15/00;C30B15/14;C30B15/20;C30B29/06;(IPC1-7):C30B15/20;C30B15/10 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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