| 摘要 |
PURPOSE: An in-situ cleaning method of an atomic layer deposition chamber is provided to remove fully residues and particles by using the in-situ cleaning process in an atomic layer deposition process. CONSTITUTION: A deposited wafer is removed from a chamber(210). The chamber is maintained under a temperature of 400 to 500 degrees centigrade and a pressure of 1 to 10 Torr according to an operation of a vacuum pumping portion(220). A gas of Cl2 is supplied to a remote plasma generation portion by using a cleaning gas supply portion(230). The Cl2 gas is injected into the inside of the chamber in order to remove residues, impurities, and undesired deposited layer from the chamber(240). The residues and impurities generated from an in-situ cleaning process are removed from the reaction chamber(250). A wafer is loaded into the chamber and an atomic layer deposition process is performed(260).
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