| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve performance such as a luminous efficiency while maintaining a preferable crystallinity for a semiconductor layer constituting a quantum well structure. <P>SOLUTION: Oxygen is doped in a quantum well active layer. First, on an n-type GaN guide layer 405, TMG of 10 sccm, TMI of 30 sccm, O<SB>2</SB>of 20 sccm, and NH<SB>3</SB>of 10 slm are supplied to form an n-type In<SB>0.02</SB>Ga<SB>0.98</SB>N barrier layer 550. Then, an amount of supplied TMI is increased to 50 sccm and an undoped In<SB>0.2</SB>Ga<SB>0.8</SB>N well layer 553 is formed with a thickness of 3 nm. This process is repeated three cycles and is completed in the n-type In<SB>0.02</SB>Ga<SB>0.98</SB>N barrier layer 550. On a multiple quantum well structure active layer 420 thus formed, TMG of 15 sccm, TMA of 5 sccm, (EtCp)<SB>2</SB>Mg of 5 sccm as an impurity, and NH<SB>3</SB>of 10 slm are supplied to form a p-type Al<SB>0.2</SB>Ga<SB>0.8</SB>N cap layer 407 with a thickness of 20 nm. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
