| 摘要 |
PROBLEM TO BE SOLVED: To heat a substrate to be treated to the treatment temperature in a short time, to uniformly supply the treatment fluid to the substrate to be treated, to improve throughput and to uniform the treatment. SOLUTION: In the state of housing a wafer W held by a holding means 35 in a processing chamber 34a of a treating container 34 provided with a heater 31A (heating means), and the state of positioning on a closely (preheating) position Pa by relatively moving the wafer W and a heating surface of the heating means (the horizontal bottom surface of a container body 32) closer to each other, the wafer W is heated (raised the temperature) to the treatment temperature. After heating (raising the temperature) the wafer W to the treatment temperature, the wafer and the horizontal bottom surface of the container 32 are separated to the treatment position Pb. In this state, the treatment fluid is supplied in the processing chamber 34a of the treating container 34, and the holding means 35 and the heating means (horizontal bottom surface of the container body 32) is approached, separated and moved intermittently or continuously and relatively. COPYRIGHT: (C)2004,JPO&NCIPI |
