| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can increase a manufacturing yield without damaging device characteristics and can improve the life of blades. SOLUTION: After forming an element section 11 on a front surface of a semiconductor substrate 10, lattice-like grooves 18 are formed on the front surface of the semiconductor substrate 10 to the middle of the whole thickness of the semiconductor substrate 10. Next, the semiconductor substrate 10 immediately below the element section 11 is removed to a depth beyond the bottom of the grooves 18 to form recess sections 19, making the semiconductor substrate thin immediately below the element section 11 while keeping the other parts thick. Then, a metal film is formed on the entire rear face of the semiconductor substrate 10 including the recess sections 19. The rear face of the semiconductor substrate 10 is removed to the grooves 18 to divide the semiconductor substrate 10 into individual semiconductor devices. COPYRIGHT: (C)2004,JPO&NCIPI |
