| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a structure suitable for achieving high breakdown resistance level. SOLUTION: In the semiconductor device, having a plurality of striped trench lines 25 which are separately arranged in parallel mutually in each adjacent cell region E1, E2 in a semiconductor layer and extending in the direction of the other cell region from one cell region, gate insulating films 19 formed in the trench lines 25 and gate electrodes 20 embedded in the trench lines 25 via the gate insulating films, with both one part of the end of each trench line 25, which are near on the other cell region and adjacent each other in each cell region, being connected via a connection part 28, and with the other ends being left open. At least one connection part 28 of one cell region and one open part 30 of the other cell region are opposed to each other. COPYRIGHT: (C)2004,JPO&NCIPI |
