| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of dry etching which does not deteriorate the processed shape of a copper-contained aluminum film that is a wire and can suppress the production of copper residue. SOLUTION: The method of dry etching which performs etching on the copper-contained aluminum film with a chlorine series gas, wherein aluminum in the copper-contained aluminum film is allowed to react with the chlorine series gas to produce aluminum chloride and aluminum chloride is allowed to react with copper in the copper-contained aluminum film to produce aluminum-copper chloride by controlling the retention time of aluminum chloride in a reaction chamber, thereby performing etching on the copper-contained aluminum film so as not to allow the copper residue to be produced. COPYRIGHT: (C)2004,JPO&NCIPI
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