发明名称 |
PROCESS FOR PRODUCING METALLIZED FILM CAPACITOR |
摘要 |
PROBLEM TO BE SOLVED: To solve the problem in a process for producing a metallized film capacitor that a dielectric film is broken or creased when an extremely thin dielectric film 3μm thick or less is subjected to metal deposition. SOLUTION: Two sheets of metallized film comprising a dielectric film subjected to metal deposition on one side are laid in layer as a set and then wound or laminated sequentially. Since the thickness of the dielectric film is doubled when it is subjected to metal deposition, a process is provided for producing a metallized film capacitor in which the process loss due to breakage or creasing of the dielectric film is reduced extremely in production. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004200590(A) |
申请公布日期 |
2004.07.15 |
申请号 |
JP20020370323 |
申请日期 |
2002.12.20 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TAKEOKA HIROKI;SAITO TOSHIHARU;SHIODA KOHEI |
分类号 |
H01G4/18;H01G4/015;(IPC1-7):H01G4/18 |
主分类号 |
H01G4/18 |
代理机构 |
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