发明名称 APPARATUS AND METHOD FOR PREPARING SILICON
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for preparing high-purity silicon through a gas-phase zinc reduction method wherein the reaction is stably carried out by locating the inlets for introducing raw material gases into the reaction apparatus at different heights and by introducing an appropriate inert gas, and a preparation method. SOLUTION: The inlet for introducing a zinc gas and the inlet for introducing a silicon tetrachloride gas are located at the upper and lower parts of the reaction apparatus, respectively. The reduction reaction is stably carried out by introducing the raw material gases through these inlets and introducing the inert gas into the outlet side, the zinc gas side, etc., of the reaction apparatus. Product quality is improved by improving the purity of the raw materials by passing the raw material gases to be introduced through the silicon. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004196642(A) 申请公布日期 2004.07.15
申请号 JP20020383376 申请日期 2002.12.19
申请人 KAMAIKE YUTAKA;YAMASE HIDEO 发明人 YAMASE HIDEO;KAMAIKE YUTAKA
分类号 C01B33/033;(IPC1-7):C01B33/033 主分类号 C01B33/033
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