| 发明名称 |
METHOD FOR FORMING CAPACITOR OF FERROELECTRIC RANDOM ACCESS MEMORY |
| 摘要 |
Methods for forming capacitor of FeRAM are disclosed. The disclosed methods can prevent the step difference from an etch-back process and scratch on a Pt layer in a CMP process using a basic slurry by performing a CMP process using an acidic slurry including an organic acid when isolating a storage electrode in a formation process of a FeRAM capacitor.
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| 申请公布号 |
US2004137646(A1) |
申请公布日期 |
2004.07.15 |
| 申请号 |
US20030610406 |
申请日期 |
2003.06.30 |
| 申请人 |
SONG SEO YOUNG;LEE SANG ICK |
发明人 |
SONG SEO YOUNG;LEE SANG ICK |
| 分类号 |
H01L21/3205;C09G1/02;H01L21/02;H01L21/304;H01L21/321;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/00;H01L21/336 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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