| 摘要 |
A semiconductor memory device can provide a memory device different in the cost and the performance using the same hardware by simply replacing a memory different in the type. This semiconductor memory device includes a bank busy circuit for variably setting a bank busy time that controls different bank cycle times, thereby controlling a memory different in the bank cycle time, a read data input circuit for inputting read data output from the memory in variable input timing, a write data output circuit for outputting write data to the memory in variable output timing, a command control circuit for controlling different command interfaces, a write mask circuit for controlling different write masks, an initial sequence control circuit for controlling a memories different in the initial sequence, and an address generation circuit for controlling different address interfaces.
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