| 发明名称 |
Controlled electron mobility galvanomagnetic devices |
| 摘要 |
A controlled electron mobility galvanomagnetic device comprising a layer of indium antimonide alloyed with a Group 13 isoelectronic element antimonide and doped n-type, the layer disposed on an insulating substrate.
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| 申请公布号 |
US2004135665(A1) |
申请公布日期 |
2004.07.15 |
| 申请号 |
US20030341032 |
申请日期 |
2003.01.13 |
| 申请人 |
PARTIN DALE L.;HEREMANS JOSEPH PIERRE;SCHROEDER THADDEUS |
发明人 |
PARTIN DALE L.;HEREMANS JOSEPH PIERRE;SCHROEDER THADDEUS |
| 分类号 |
H01L43/10;(IPC1-7):H01L43/00;H01L43/02 |
主分类号 |
H01L43/10 |
| 代理机构 |
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