Semiconductor device and method of fabricating the same, nonvolatile semiconductor memory and method of fabricating the same, and electronic apparatus including nonvolatile semiconductor memory

摘要

A semiconductor device according to an aspect of the present invention having a first gate insulating film formed in a first active region of a semiconductor substrate and having a first film thickness, and a second gate insulating film formed in a second active region of the semiconductor substrate and having a second film thickness smaller than the first film thickness, wherein a semiconductor substrate surface in the first active region is lower than that in the second active region is provided.