NANOCRYSTAL STRUCTURES,申请号WO2002US36900-传众专利搜索

发明名称	NANOCRYSTAL STRUCTURES
摘要	A structure including a grating (43) and a semiconductor nanocrystal layer on the grating (43), can be a laser (10). The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals (32) including a Group II-VI, the nanocrystals (32) being distributed in a metal oxide matrix (33). The grating (43) can have a periodicity from 200 nm to 500 nm.
申请公布号	WO03043810(A3)	申请公布日期	2004.07.15
申请号	WO2002US36900	申请日期	2002.11.18
申请人	MASSACHUSETTS INSTITUTE OF TECHNOLOGY;EISLER, HANS, J.;SUNDAR, VIKRAM, C.;WALSH, MICHAEL, E.;KLIMOV, VICTOR, I.;BAWENDI, MOUNGI, G.;SMITH, HENRY, I.;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA	发明人	EISLER, HANS, J.;SUNDAR, VIKRAM, C.;WALSH, MICHAEL, E.;KLIMOV, VICTOR, I.;BAWENDI, MOUNGI, G.;SMITH, HENRY, I.
分类号	B82B1/00;C30B5/00;G02B6/122;H01L21/20;H01L21/36;H01L29/06;H01L29/20;H01L29/22;H01L29/26;H01S5/12	主分类号	B82B1/00
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