发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To effectively recover raw materials by enhancing a cooling efficiency. SOLUTION: The substrate treatment apparatus is provided with: a reaction chamber where a substrate is treated; an exhaust tube where exhaust gas is exhausted from the reaction chamber; a recovery means 40 provided at the exhaust tube, and where the exhaust gas is cooled to change the phase of a raw material in the exhaust gas, and the raw material is recovered. The recovery means is provided with a plurality of capillaries 52 shunting the exhaust gas flow at the inside of the recovery means. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004197182(A) 申请公布日期 2004.07.15
申请号 JP20020368567 申请日期 2002.12.19
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 WADA TETSUYA;IKEDA FUMIHIDE
分类号 C23C16/44;H01L21/285;H01L21/31;(IPC1-7):C23C16/44 主分类号 C23C16/44
代理机构 代理人
主权项
地址