| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode that is high in luminance and, in addition, in productivity. <P>SOLUTION: This light emitting diode has at least an AlGaInP light emitting layer and a transparent electrode. The transparent electrode is composed of a ZnO film doped with a group III element or its compound. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
