| 摘要 |
PROBLEM TO BE SOLVED: To improve commutation characteristics and permit light spot arc control as well as load control by one chip. SOLUTION: In a CH1 side photothyristor and a CH2 side photothyristor, a shot key barrier diode 44 is formed between a p-gate diffusion region 33 and an n-type silicon substrate 31. Accordingly, the pouring of a minority carrier from the p-gate diffusion region 33 into the n-type silicon substrate 31 is suppressed and the mount of remaining carrier is decreased whereby an excessive carrier remaining in the n-type silicon substrate 31 upon commutation reduces a chance to move toward a reverse channel side, thereby permitting the improvement of the commutation characteristics. Further, a light spot arc coupler for controlling the light spot arc and a load can be provided by combining with an LED. COPYRIGHT: (C)2004,JPO&NCIPI |
