| 摘要 |
PROBLEM TO BE SOLVED: To provide a degree of freedom in the design of an LDD overlapped with a gate electrode through self alignment by applying etching work under an etching condition having a high selectivity between a mask pattern and a metal such as titanium or the like upon forming a first conductive layer pattern, in a problem related to the selectivity of the etching work. SOLUTION: A lamination structural body consisting of a lower layer side first conductive layer and an upper layer side second conductive layer is formed on a semiconductor layer through a gate insulating film, then, a mask pattern is formed on the lamination structural body. Subsequently, the second conductive layer and the first conductive layer are processed by etching under a condition that the etching rate of the mask pattern is quick to form the first conductive layer pattern having a tapered part at the edge of the same, then, the second conductive layer in the first conductive layer pattern is processed selectively by etching based on a remaining mask pattern to form a second conductive layer pattern whereby the second conductive layer pattern, shorter than the first conductive layer, is formed. COPYRIGHT: (C)2004,JPO&NCIPI |
