发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for mounting semiconductor substrates in a high density by thinning the semiconductor substrates. SOLUTION: A method for manufacturing a semiconductor device includes the steps of thinning the semiconductor substrate having a circuit pattern on the surface by polishing the rear surface of the semiconductor substrate in the state that the semiconductor substrate is temporarily clamped at a support, dividing the semiconductor substrate into chips, and releasing the divided semiconductor substrates from the support. In this method, the temporarily clamping of the semiconductor substrate is performed by butting a first electrode pad formed on the surface of the semiconductor substrate and a second electrode pad formed on the surface of the support via a first solder, and heating the first and second pads at the temperature of the melting temperature or higher of the first solder. The area of the first electrode pad is increased as compared with that of the second electrode pad. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004200216(A) 申请公布日期 2004.07.15
申请号 JP20020363529 申请日期 2002.12.16
申请人 FUJITSU LTD 发明人 TANIGUCHI OSAMU;ISHIZUKI YOSHIKATSU;YAMAGISHI YASUO;OMOTE KOJI;MIZUKOSHI MASATAKA
分类号 H01L23/52;H01L21/301;H01L21/304;H01L21/3205;H01L21/60;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/301;H01L21/320 主分类号 H01L23/52
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