| 摘要 |
PROBLEM TO BE SOLVED: To improve a reflecting efficiency without increasing a lateral resistance in the state that a p-type semiconductor layer is thinned. SOLUTION: A photodetector 2 is provided on a semiconductor substrate 1. A transparent electrode 6 is provided between the semiconductor layer 4 for constituting the uppermost layer of the photodetector 2 of a semiconductor photodetecting element to which a light is incident from the rear surface side of the semiconductor substrate 1 and a metal electrode 7. The transparent electrode 6 is brought into direct contact with the semiconductor layer 4 and the metal electrode 7. COPYRIGHT: (C)2004,JPO&NCIPI
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