发明名称 Copper interconnects
摘要 A method for forming a conductive region on a first portion of a substrate, the method comprising exposing the first portion to a filtered beam of substantially fully ionised metallic ions under a pulsed, modulated electrical bias. The method uses FCVA (Filtered Cathodic Vacuum Arc) techniques to generate the filtered ion beam and permits the formation of a conformal metal coating, even in high aspect ratio vias and trenches. The method also permits the in-filling of vias and trenches to form conductive interconnects. Particular examples concern the deposition of copper ions. Also disclosed are an adapted FCVA apparatus for depositing metals on substrates and control apparatus for controlling ion beams impacting upon substrates, the control apparatus being suitable for incorporation within existing filtered on beam sources.
申请公布号 US2004137725(A1) 申请公布日期 2004.07.15
申请号 US20030340898 申请日期 2003.01.10
申请人 NANOFILM TECHNOLOGIES INTERNATIONAL PTE LTD 发明人 CHEAH LI KANG;SHI XU;HU LANG
分类号 C23C14/04;C23C14/14;C23C14/24;C23C14/32;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 主分类号 C23C14/04
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