| 摘要 |
A plasma oscillation switching device of the present invention comprises semiconductor substrate 101; first barrier layer 103 that is composed of a III-V compound semiconductor and formed on the substrate; channel layer 104 that is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layer 105 that is composed of a III-V compound semiconductor and formed on the channel layer; source electrode 107, gate electrode 109 and drain electrode 108 provided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer 103a, the second barrier layer includes p-type diffusion layer 105a, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer 106.
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