| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a negative type photosensitive composition, which can form a silicon-containing thick resist film, superior in dry etching resistance in which a crack is hardly generated when the patterning is performed. <P>SOLUTION: The negative type photosensitive composition includes [1] a polyorganosiloxane resin having an epoxy group and/or an oxetane group, a polyorganosiloxane resin having a hydroxy group, and an alkali-soluble polyorganosiloxane resin having a carboxyl group. [2] The method for forming a resist pattern includes a step for obtaining a resist film by applying the negative type photosensitive composition defined by [1] on a base material, a step for pattern-exposing the obtained resist film, and a step for forming a resist pattern by developing the resist film after the pattern-exposure and by dissolving and removing the unexposed resist film. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
