| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can stably form a mesa structure, by controlling the side-etching amount in the semiconductor device, and to provide its manufacturing method. SOLUTION: The orientation of the upper face of a compound semiconductor layer is set to be at an orientation whose etching rate by a prescribed etchant is the fastest. For example, if the orientation of the upper face S<SB>15</SB>of the compound semiconductor layer 15 is set as the (110) plane and a side on which a pattern is formed is set as the [1-11] orientation, the etching rate in side etching is nearly 1/√2 times that in the depth direction. Etching in the depth direction has selectivity, depending on the kind of compound constituting the layer, and reaction comes to a halt at the interface between the upper and lower layers. In other words, side etching will not advance very much in the depth direction, even if overetching is applied, and side etching can be controlled easily and a stable form is obtained. COPYRIGHT: (C)2004,JPO&NCIPI
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