SIMOX WAFER AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a SIMOX (separation by implanted oxygen) wafer in which the density of Secco-etched pits of an SOI (silicon on insulator) layer is adjusted to≤1×104pits/cm2and the density of Secco-etched pits on the bottom side of a BOX (buried oxide) layer is adjusted to≥1×104pits/cm2. SOLUTION: A method of manufacturing the SIMOX wafer includes a step S1 of implanting oxygen ions into a silicon wafer, a step S2 of forming the BOX layer 3 by performing heat treatment in a heat-treating atmosphere containing oxygen at a concentration of≥5% and, at the same time, taking the oxygen contained in the atmosphere into the silicon wafer, and a step S3 of outwardly diffusing the oxygen contained in the SOI layer 4 by performing heat treatment in a heat-treating atmosphere containing oxygen at a concentration of≤1%. The method also includes a step S4 of forming an IG layer 5 on the bottom side of the BOX layer 3 without generating any OSF in the SOI layer 4 by performing heat treatment in a non-oxidizing atmosphere. COPYRIGHT: (C)2004,JPO&NCIPI