| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent a short circuit of wiring and an electrode, an increase in a resistance value or a disconnection, and to provide a method for manufacturing the same. SOLUTION: This semiconductor device is provided by forming an oxide film on the surface of an Si substrate 10; then forming a first polysilicon layer 30 on the oxide film, patterning the first polysilicon layer 30; thereafter oxidizing the surface of the first polysilicon layer 30 to form an oxide film on the surface of the Si substrate 10, and the surface of the first polysilicon layer 30; then forming a sacrificial polysilicon layer 40 on the surface of the oxide film; thereafter removing the sacrificial polysilicon layer 40 by etching, oxidizing the surface of the sacrificial polysilicon layer 40 retained on the periphery of the first polysilicon layer 30; then forming a second polysilicon layer 35 on the surface of the Si substrate 10, the surface of the first polysilicon layer 30, and the oxidized surface of the sacrificial polysilicon layer 40; and then patterning the second polysilicon layer 35 by anisotropically etching. COPYRIGHT: (C)2004,JPO&NCIPI
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