发明名称 METHOD OF MANUFACTURING SINGLE CRYSTAL BORON NANO-BELT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a single crystal boron nano-belt with a very simple process using no catalyst or the like without using toxic gaseous stating material or the like. SOLUTION: The method of manufacturing the single crystal boron nano-belt is performed by using a boron sintered compact formed by sintering boron powder having 98wt.% purity as a target and irradiating the target with 100-300mJ laser beam per 1 pulse under a pressure condition of 1-100Pa and a temperature condition of 700-1,100°C. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004196588(A) 申请公布日期 2004.07.15
申请号 JP20020366827 申请日期 2002.12.18
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 SASAKI TAKESHI;ZHONGKE WANG;SHIMIZU SADAKI;KOSHIZAKI NAOTO;KAWAGUCHI KENJI;KODAIRA TETSUYA;KIMURA KAORU
分类号 C01B35/02;C23C14/28;C30B29/62;(IPC1-7):C30B29/62 主分类号 C01B35/02
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