发明名称 |
METHOD OF MANUFACTURING SINGLE CRYSTAL BORON NANO-BELT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a single crystal boron nano-belt with a very simple process using no catalyst or the like without using toxic gaseous stating material or the like. SOLUTION: The method of manufacturing the single crystal boron nano-belt is performed by using a boron sintered compact formed by sintering boron powder having 98wt.% purity as a target and irradiating the target with 100-300mJ laser beam per 1 pulse under a pressure condition of 1-100Pa and a temperature condition of 700-1,100°C. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004196588(A) |
申请公布日期 |
2004.07.15 |
申请号 |
JP20020366827 |
申请日期 |
2002.12.18 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
SASAKI TAKESHI;ZHONGKE WANG;SHIMIZU SADAKI;KOSHIZAKI NAOTO;KAWAGUCHI KENJI;KODAIRA TETSUYA;KIMURA KAORU |
分类号 |
C01B35/02;C23C14/28;C30B29/62;(IPC1-7):C30B29/62 |
主分类号 |
C01B35/02 |
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