发明名称 magnetoresistance apparatus having reduced overlapping of permanent magnet layer and method for manufacturing the same
摘要 In a magnetoresistance apparatus including a first functional layer and a second functional layer magnetically connected to the first functional layer, an overlapping ratio of the second functional layer onto the first functional layer is approximately 0 to 10 percent.
申请公布号 US2004134877(A1) 申请公布日期 2004.07.15
申请号 US20040750946 申请日期 2004.01.05
申请人 TDK CORPORATION 发明人 ISHIWATA NOBUYUKI;MORI SHIGERU;NAGAHARA KIYOKAZU;ISHI TSUTOMU;ISHIHARA KUNIHIKO;FUKAMI EIZO;NAKADA MASAFUMI
分类号 G11B5/39;G01R33/09;G11B5/31;H01F41/30;(IPC1-7):B44C1/22 主分类号 G11B5/39
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