| 摘要 |
A thin film ferroelectric/piezoelectric discharge device exhibits a stable high electrical resistance state. With an applied voltage, electron avalanche breakdown occurs and the device exhibits a low resistance state and recovers from this state. Thereby it is a solid state spark gap. With reduction of the voltage after breakdown the conduction of current ensues and contributes to the spontaneous recovery of the high resistive state evidenced by the measured increase in resistance in time. Gamma radiation ionization perturbs this recovery rate and this can be measured and differentiated from the conduction current induced resistance change. Thereby it is a room temperature gamma detector. The device is made by growing a controlled thickness of oxide on a titanium metal or alloy (12) surface (14) by anodization; heating in a metal oxide powder transforming the oxide into a ferroelectric/piezoelectric (16); and applying an electrode (18) to the exposed ferroelectric/piezoelectric surface.
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