发明名称 METHOD FOR DETERMINING THE TEMPERATURE OF A SEMICONDUCTOR WAFER IN A RAPID THERMAL PROCESSING SYSTEM
摘要 The invention relates to a method for determining at least one state variable from a model of an RTP system by means of at least one test signal that is picked up from the RTP system, i.e. the test parameter which depends on the state variable that is to be determined, and a test parameter, i.e. the predicted value, which is predicted by means of the model, the test parameter and the predicted value each comprising a direct component and an alternating component. According to the inventive method, at least the alternating component is separately determined by means of filters in order to form a first difference between the alternating component of the test parameter and the alternating component of the test parameter, which is predicted by the model; at least one model parameter is adjusted by feeding the first difference back into the model so as to adjust the model behavior to variable system parameters; a second difference is formed from the test parameter and the predicted value or from the test parameter that is corrected by the alternating component and the corrected predicted value; a state of the model system is corrected by feeding the second difference back into the model in order to match the state of the model system with that of the real system; and the at least one state variable is picked up from the model.
申请公布号 WO2004059271(A1) 申请公布日期 2004.07.15
申请号 WO2003EP13387 申请日期 2003.11.28
申请人 MATTSON THERMAL PRODUCTS GMBH;HAUF, MARKUS;MERKL, CHRISTOPH;STRIEBEL, CHRISTOPH 发明人 HAUF, MARKUS;MERKL, CHRISTOPH;STRIEBEL, CHRISTOPH
分类号 G01J5/00;H01L21/00;H01L21/324 主分类号 G01J5/00
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