发明名称 DIAMOND FILM-FORMING SILICON AND ITS MANUFACTURING METHOD
摘要 (Problem) To provide a diamond electrode applicable industrially and a diamond film-forming silicon used for the diamond electrode. (Solving Means) A diamond film-forming silicon is used. On at least a part of the silicon base having a thickness of 500 mum or less, a film is formed of conductive diamond. Alternatively an electrode characterized by comprising a conductive support base and a diamond film-forming silicon is used. The diamond film-forming silicon has a flexibility, and hence it can be attached to a conductive support base, thereby easily producing a large-area electrode and a three-dimensionally shaped electrode.
申请公布号 WO2004059048(A1) 申请公布日期 2004.07.15
申请号 WO2003JP16553 申请日期 2003.12.24
申请人 EBARA CORPORATION;FUJIMURA, HIROYUKI;SERIKAWA, ROBERTO MASAHIRO;ISHIKAWA, NAOKI;MISHIMA, TAKAHIRO 发明人 FUJIMURA, HIROYUKI;SERIKAWA, ROBERTO MASAHIRO;ISHIKAWA, NAOKI;MISHIMA, TAKAHIRO
分类号 C30B29/06;C23C16/27;C23C16/54;C30B25/02;C30B25/18 主分类号 C30B29/06
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