| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor film and a method of forming the semiconductor film and a photo electrode. <P>SOLUTION: The semiconductor film has a semiconductor fine particle layer formed from a plurality of semiconductor fine particles on the surface of a substrate, a part or the whole of a contact part of the semiconductor fine particle is sintered and the contact part is formed from at least one titanium sol (A) selected from hydrolyzable titanium, a hydrolyzable titanium low condensation material, titanium hydroxide and a titanium hydroxide low condensation material. The method of forming the semiconductor film includes processes for (1) forming the semiconductor fine particle layer, (2) applying the titanium sol (A) or peroxo titanium sol (A1) and (3) after washing, (4) evaporating water by heating, if necessary. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
