| 摘要 |
PROBLEM TO BE SOLVED: To provide a III-V compound semiconductor device which has a steep interface and excellent property such as mobility. SOLUTION: An AlN epitaxial buffer layer 2, a GaN channel layer 3 which is a first binary compound semiconductor layer and has carrier concentration of 1×10<SP>16</SP>cm<SP>-3</SP>, an AlN improved-barrier-property layer 4 which is a second binary compound semiconductor layer, and an Al<SB>0.2</SB>Ga<SB>0.8</SB>N barrier layer 5 which is a ternary compound semiconductor and has carrier concentration of 2×10<SP>17</SP>cm<SP>-3</SP>are stacked on a crystal face (0001) of a semi-insulating SiC substrate 1 in the above order. Then, a source electrode 6a, a drain electrode 6b and a gate electrode 7 are formed thereon. An AlN improved-hetero-property layer, which is the second binary compound layer having a band gap higher than that of the first compound layer, is interposed between the GaN channel layer 3 which is the first binary compound semiconductor layer and the AlGaN barrier layer 5 which is the ternary compound crystal semiconductor layer. COPYRIGHT: (C)2004,JPO&NCIPI
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