| 摘要 |
PROBLEM TO BE SOLVED: To obtain a dielectric separation type semiconductor device for improving a breakdown voltage without losing RESURF (Reduced SURface Field) effect. SOLUTION: The dielectric separation type semiconductor device comprises a main dielectric layer 3-1 arranged on the first main surface of a semiconductor substrate 1, a first-conductivity first semiconductor layer 2 that opposes the semiconductor substrate 1 and sandwiches the main dielectric layer 3-1, a first-conductivity second semiconductor layer 6 formed on the surface of the first-conductivity layer 2, a second-conductivity third semiconductor layer 7 for surrounding the outer periphery end of the first semiconductor layer 2, an annular insulator 9 for surrounding the outer periphery end of the third semiconductor layer 7, a first main electrode arranged on the surface of the second semiconductor layer 6, a second main electrode arranged on the surface of the third semiconductor layer 7, a back surface electrode 8 arranged on the second main surface of the semiconductor substrate 1, and an auxiliary dielectric layer 3-2 that is arranged directly below the second semiconductor layer 6 and is at least partially joined to the second main surface. COPYRIGHT: (C)2004,JPO&NCIPI
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